Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.
Switching CdSe quantum dot luminescence with a-Si:H / M. Di Vece, S.N.F. Van Duren, D.J. Van Den Heuvel, D. Mitoraj, Y. Kuang, H.C. Gerritsen, R.E.I. Schropp. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - 24:31(2013 Aug), pp. 315202.1-315202.4. [10.1088/0957-4484/24/31/315202]
Switching CdSe quantum dot luminescence with a-Si:H
M. Di VecePrimo
;
2013
Abstract
Dynamical control of the luminescence of quantum dots is highly important for technology in the field of telecommunication, displays, and photovoltaics. In this work we use an a-Si:H solar cell structure in which CdSe quantum dots are sandwiched. By applying a positive potential over the device, charge carriers generated in the quantum dots are transported to the a-Si:H layer and transformed into electrical energy, changing the luminescence intensity with a switching time lower than 60 ms. This is a promising new step towards using quantum dots in optical switching devices.
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