Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
Electrical characteristics of silicon pixel detectors / I. Gorelov, G. Gorfine, M. Hoeferkamp, V. Mata Bruni, G. Santistevan, S.C. Seidel, A. Ciocio, K. Einsweiler, J. Emes, M. Gilchriese, A. Joshi, S. Kleinfelder, R. Marchesini, F. Mccormack, O. Milgrome, N. Palaio, F. Pengg, J. Richardson, G. Zizka, M. Ackers, G. Comes, P. Fischer, M. Keil, G. Martinez, I. Peric, O. Runolfsson, T. Stockmanns, J. Treis, N. Wermes, C. Gossling, F. Hugging, J. Klaiber Lodewigs, O. Krasel, J. Wustenfeld, R. Wunstorf, D. Barberis, R. Beccherle, C. Caso, M. Cervetto, G. Darbo, G. Gagliardi, C. Gemme, P. Morettini, P. Nechaeva, B. Osculati, L. Rossi, E. Charles, D. Fasching, L. Blanquart, P. Breugnon, D. Calvet, J.C. Clemens, P. Delpierre, G. Hallewell, D. Laugier, T. Mouthuy, A.N. Rozanov, I. Valin, A. Andreazza, M. Caccia, M. Citterio, T. Lari, C. Meroni, F. Ragusa, C. Troncon, G. Vegni, G. Lutz, R.H. Richter, T. Rohe, G.R. Boyd, P.L. Skubic, P. Sicho, L. Tomasek, V. Vrba, M. Holder, M. Ziolkowski, D. Cauz, M. Cobal Grassmann, S. D'Auria, B. De Lotto, C. Del Papa, H. Grassmann, L. Santi, K.H. Becks, G. Lenzen, C. Linder. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 489:1-3(2002 Aug 21), pp. 202-217. [10.1016/S0168-9002(02)00557-0]
Electrical characteristics of silicon pixel detectors
A. Andreazza;C. Meroni;F. Ragusa;G. Vegni;S. D'Auria;
2002
Abstract
Prototype sensors for the ATLAS silicon pixel detector have been electrically characterized. The current and voltage characteristics, charge-collection efficiencies, and resolutions have been examined. Devices were fabricated on oxygenated and standard detector-grade silicon wafers. Results from prototypes which examine p-stop and standard and moderated p-spray isolation are presented for a variety of geometrical options. Some of the comparisons relate unirradiated sensors with those that have received fluences relevant to LHC operation.
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