This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiation hardness against cumulative dose effects can easily achieved by using a 65 nm technology, as the oxide thickness is thin enough to provide intrinsic radiation hardness against total ionizing dose. Single event effects can be mitigated by using ad-hoc techniques. The SRAM is based on Dual Interlocked cells (DICE) to reduce the upset occurrence in the internal node of memory latches. Electrical simulations demonstrate a very good tolerance to single event effects.
A radiation hardened static RAM for high-energy physics experiments / S. Shojaii, A. Stabile, V. Liberali - In: 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014Piscataway : IEEE, 2014 May. - ISBN 9781479952953. - pp. 359-362 (( Intervento presentato al 29. convegno International conference on microelectronics (MIEL) tenutosi a Belgrade nel 2014.
A radiation hardened static RAM for high-energy physics experiments
S. Shojaii;A. Stabile;V. Liberali
2014
Abstract
This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiation hardness against cumulative dose effects can easily achieved by using a 65 nm technology, as the oxide thickness is thin enough to provide intrinsic radiation hardness against total ionizing dose. Single event effects can be mitigated by using ad-hoc techniques. The SRAM is based on Dual Interlocked cells (DICE) to reduce the upset occurrence in the internal node of memory latches. Electrical simulations demonstrate a very good tolerance to single event effects.File | Dimensione | Formato | |
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