This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiation hardness against cumulative dose effects can easily achieved by using a 65 nm technology, as the oxide thickness is thin enough to provide intrinsic radiation hardness against total ionizing dose. Single event effects can be mitigated by using ad-hoc techniques. The SRAM is based on Dual Interlocked cells (DICE) to reduce the upset occurrence in the internal node of memory latches. Electrical simulations demonstrate a very good tolerance to single event effects.

A radiation hardened static RAM for high-energy physics experiments / S. Shojaii, A. Stabile, V. Liberali - In: 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014Piscataway : IEEE, 2014 May. - ISBN 9781479952953. - pp. 359-362 (( Intervento presentato al 29. convegno International conference on microelectronics (MIEL) tenutosi a Belgrade nel 2014.

A radiation hardened static RAM for high-energy physics experiments

S. Shojaii;A. Stabile;V. Liberali
2014

Abstract

This paper presents the design of a static RAM cell in 65 nm CMOS technology. A good level of radiation hardness against cumulative dose effects can easily achieved by using a 65 nm technology, as the oxide thickness is thin enough to provide intrinsic radiation hardness against total ionizing dose. Single event effects can be mitigated by using ad-hoc techniques. The SRAM is based on Dual Interlocked cells (DICE) to reduce the upset occurrence in the internal node of memory latches. Electrical simulations demonstrate a very good tolerance to single event effects.
radiation hardening; SRAM; dual interlocked cells
Settore ING-INF/01 - Elettronica
mag-2014
Institute of electrical and electronic engineers
Book Part (author)
File in questo prodotto:
File Dimensione Formato  
2014-A_radiation_hardened_static_RAM_for_high-energy_physics_experiments.pdf

accesso riservato

Tipologia: Publisher's version/PDF
Dimensione 367.42 kB
Formato Adobe PDF
367.42 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/237842
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 0
social impact