The design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.
A low noise silicon detector preamplifier system for room temperature x-ray spectroscopy / G. Bertuccio, A. Pullia. - 302(1993), pp. 597-603. ((Intervento presentato al convegno MRS spring meeting : symposium F : semiconductors for room-temperature radiation detector applications nel 1993.
A low noise silicon detector preamplifier system for room temperature x-ray spectroscopy
A. PulliaUltimo
1993
Abstract
The design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.
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