The analysis of the noise properties of heterojunction field effect transistors open the perspectives in designing charge preamplifiers operating at short shaping times with good noise performance. We presents the characteristics of these devices, the expected performance and some experimental results on prototypes of HFET charge preamplifiers. © 1995 Elsevier Science B.V.
New perspectives in high-speed low-noise charge amplifiers with ultra-wide band heterojunction FETs / G. Bertuccio, G. De Geronimo, A. Longoni, A. Pullia. - In: NUCLEAR PHYSICS B-PROCEEDINGS SUPPLEMENTS. - ISSN 0920-5632. - 44:1/3(1995), pp. 591-598. [10.1016/S0920-5632(95)80091-3]
New perspectives in high-speed low-noise charge amplifiers with ultra-wide band heterojunction FETs
A. PulliaUltimo
1995
Abstract
The analysis of the noise properties of heterojunction field effect transistors open the perspectives in designing charge preamplifiers operating at short shaping times with good noise performance. We presents the characteristics of these devices, the expected performance and some experimental results on prototypes of HFET charge preamplifiers. © 1995 Elsevier Science B.V.
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