We present an analysis of the electronic noise contributions which limit the resolution of X- and γ-ray spectrometers employing semiconductor detectors operating at room temperature and at signal processing times in the sub-microsecond range. The figures of merit of the front-end transistors, relevant to attain the highest resolution, are put in evidence. It is shown how the correlation between the gate and drain current noises in FETs plays a significant role in the equivalent noise charge of a charge preamplifier. Some state of the art devices, belonging to different technologies, JFET, MOSFET, MESFET and HFET, are examined.
Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy / G. Bertuccio, A. Pullia, G. De Geronimo. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 380:1/2(1996), pp. 301-307.
Criteria of choice of the front-end transistor for low-noise preamplification of detector signals at sub-microsecond shaping times for X- and γ-ray spectroscopy
A. PulliaSecondo
;
1996
Abstract
We present an analysis of the electronic noise contributions which limit the resolution of X- and γ-ray spectrometers employing semiconductor detectors operating at room temperature and at signal processing times in the sub-microsecond range. The figures of merit of the front-end transistors, relevant to attain the highest resolution, are put in evidence. It is shown how the correlation between the gate and drain current noises in FETs plays a significant role in the equivalent noise charge of a charge preamplifier. Some state of the art devices, belonging to different technologies, JFET, MOSFET, MESFET and HFET, are examined.
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