We developed and realized a fast integrated charge-sensitive preamplifier for segmented High Purity Germanium (HPGe) detectors, able to directly drive long 50-ohm coaxial cables. The circuit is realized in a 5V 0.8um CMOS technology. It includes an external input FET, mod. BF862, which can be easily replaced if necessary. The charge-to-voltage gain and the fall time are set by an external RC feedback network, and can be changed in a broad range of values. The preamplifier works both at room and at cryogenic temperatures. The area occupancy of the chip is (366 x 275)um^2 and the static power consumption is 8mW excluding the FET. The preamplifier is optimized for hole signals, i.e. negative output voltage swings. With a 100O-ohm output load it is able to provide an output swing of -2.4V, against a negative power supply of -3V. The transition time for such a large pulse is 12.8ns. The noise performance with a 15pF detector capacitance is 110 r.m.s. electrons both at 300K and at 77K, at a quasi-Gaussian shaping time of 10us. The obtained performance is adequate for gamma-ray spectroscopy and pulse-shape analysis with HPGe segmented detectors.
A fast VLSI preamplifier for segmented HPGe gamma-ray detectors / A. Pullia, F. Zocca, S. Riboldi, C. Cattadori - In: 2006 IEEE Nuclear Science Symposium Conference Record : Nuclear Science Symposium; Medical Imaging Conference; 15th International Workshop on Room-Temperature Semiconductor X- and Gamma-Ray Detectors; Special Focus Workshops / [a cura di] B. Phlips. - Piscataway : IEEE, 2007. - ISBN 1-4244-0560-2. - pp. 350-353 (( convegno 2006 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector workshop tenutosi a San Diego, CA, USA nel 2006 [10.1109/NSSMIC.2006.356173].
A fast VLSI preamplifier for segmented HPGe gamma-ray detectors
A. PulliaPrimo
;F. ZoccaSecondo
;S. RiboldiPenultimo
;
2007
Abstract
We developed and realized a fast integrated charge-sensitive preamplifier for segmented High Purity Germanium (HPGe) detectors, able to directly drive long 50-ohm coaxial cables. The circuit is realized in a 5V 0.8um CMOS technology. It includes an external input FET, mod. BF862, which can be easily replaced if necessary. The charge-to-voltage gain and the fall time are set by an external RC feedback network, and can be changed in a broad range of values. The preamplifier works both at room and at cryogenic temperatures. The area occupancy of the chip is (366 x 275)um^2 and the static power consumption is 8mW excluding the FET. The preamplifier is optimized for hole signals, i.e. negative output voltage swings. With a 100O-ohm output load it is able to provide an output swing of -2.4V, against a negative power supply of -3V. The transition time for such a large pulse is 12.8ns. The noise performance with a 15pF detector capacitance is 110 r.m.s. electrons both at 300K and at 77K, at a quasi-Gaussian shaping time of 10us. The obtained performance is adequate for gamma-ray spectroscopy and pulse-shape analysis with HPGe segmented detectors.
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