Carbonnitride films were synthesized by ionbeam assisted sputtering. A graphite target was sputtered by argon or nitrogen ions and the growing film was simultaneously bombarded by a focused nitrogen ionbeam of energies between 100–800 eV at 100 and 400 °C. It has been found that film growth occurs only if the ion-to-atom arrival ratio is smaller than a critical value of about 1.8 and it appears to be almost independent of the assisting beam energy. This effect, limiting the film growth, is a consequence of a chemical reaction between carbon and nitrogen forming volatile CN compounds. Experimental evidence was obtained by monitoring the gas evolved during the deposition process with a quadrupole gas analyzer. The maximum value of nitrogen content measured by Auger electron spectroscopy was about 35 at.%. All films were investigated by Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy. The latter technique shows a preferential bonding of N to sp3-hybridized C. Hardness measurements with values up to 20 GPa were measured using a depth sensing nanoindenter.
Ion beam deposited carbon nitride films : characterization and identification of chemical sputtering / P. Hammer, M.A. Baker, C. Lenardi, W. Gissler. - In: THIN SOLID FILMS. - ISSN 0040-6090. - 290/291(1996 Dec 15), pp. 107-111. ((Intervento presentato al 23. convegno International conference on metallurgical coatings and thin films tenutosi a San Diego (California) nel 199.
|Titolo:||Ion beam deposited carbon nitride films : characterization and identification of chemical sputtering|
LENARDI, CRISTINA (Penultimo)
|Parole Chiave:||carbon nitride ; chemical sputtering ; nanoindentation ; X-ray photoelectron spectroscopy|
|Settore Scientifico Disciplinare:||Settore FIS/01 - Fisica Sperimentale|
|Data di pubblicazione:||15-dic-1996|
|Digital Object Identifier (DOI):||http://dx.doi.org/10.1016/S0040-6090(96)09061-X|
|Appare nelle tipologie:||01 - Articolo su periodico|