We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy / F. Arciprete, F. Patella, A. Balzarotti, M. Fanfoni, N. Motta, A. Sgarlata, A. Boselli, G. Onida, A. Shkrebtii, R. Del Sole. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 58:16(1998), pp. R10139-R10142.
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy
G. Onida;
1998
Abstract
We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
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