We compare, by high-resolution electron-energy-loss spectroscopy (HREELS), the electronic structure of the GaAs(110)1x1 surface and that of the GaAs(001)2x4 As-rich surface in the energy-loss region 0.5-5 eV. The HREEL spectra are interpreted in terms of realistic calculations. The spectral features above the gap are assigned to electronic transitions involving surface and/or bulk states. Losses at energies within the gap are associated to defect states at the surface. [S0163-1829(98)51236-2].
Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy / F. Arciprete, F. Patella, A. Balzarotti, M. Fanfoni, N. Motta, A. Sgarlata, A. Boselli, G. Onida, A. Shkrebtii, R. Del Sole. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 58:16(1998), pp. R10139-R10142.
Titolo: | Electronic structure of the GaAs(001)2x4 and GaAs(110) surfaces studied by high-resolution electron-energy-loss spectroscopy |
Autori: | |
Settore Scientifico Disciplinare: | Settore FIS/03 - Fisica della Materia |
Data di pubblicazione: | 1998 |
Rivista: | |
Tipologia: | Article (author) |
Digital Object Identifier (DOI): | http://dx.doi.org/10.1103/PhysRevB.58.R10139 |
Appare nelle tipologie: | 01 - Articolo su periodico |