We have exploited the possibility of obtaining SiC by annealing at selected increasing temperatures cluster-assembled carbon films deposited in situ by a supersonic beam onto Si(1 0 0)-(2 × 1) substrates. We measured the evolution of the valence bands and of the Si 2p and C 1s core level spectra to monitor the thermal induced effects in the atomic concentrations and the electronic structure at the interface. Our results indicate that at the interface Si-C bonds are already formed at 700 °C, a temperature that is significantly lower (≈50 °C) than found in literature by using other C-based precursors for SiC growth on Si surfaces. Supersonic carbon cluster beam deposition seems to be promising for the growth of SiC films on Si surfaces with improved interface quality.

Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy / E. Magnano, C. Cepek, M. Sancrotti, F. Siviero, S. Vinati, C. Lenardi, E. Barborini, P. Piseri, P. Milani. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 212(2003), pp. 879-884. ((Intervento presentato al 11. convegno International Conference on Solid Films and Surfaces (ICSFE-11) tenutosi a Marseille, France nel 2002.

Thermally induced changes in cluster-assembled carbon nanocluster films observed via photoelectron spectroscopy

C. Lenardi;P. Piseri
Penultimo
;
P. Milani
Ultimo
2003

Abstract

We have exploited the possibility of obtaining SiC by annealing at selected increasing temperatures cluster-assembled carbon films deposited in situ by a supersonic beam onto Si(1 0 0)-(2 × 1) substrates. We measured the evolution of the valence bands and of the Si 2p and C 1s core level spectra to monitor the thermal induced effects in the atomic concentrations and the electronic structure at the interface. Our results indicate that at the interface Si-C bonds are already formed at 700 °C, a temperature that is significantly lower (≈50 °C) than found in literature by using other C-based precursors for SiC growth on Si surfaces. Supersonic carbon cluster beam deposition seems to be promising for the growth of SiC films on Si surfaces with improved interface quality.
Settore FIS/03 - Fisica della Materia
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/2434/183773
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