Samples of Ga2O, synthesized by reacting Ga2O3 and metallic gallium, are analyzed by XPS measurements. These samples reveal the presence of a new photoelectron signal, assigned to Ga(I), with 3d binding energy of 19.0 eV, which is lower than the measured GaIII(3d) binding energy (20.6 eV) and higher than the measured Ga0(3d) binding energy (18.5 eV). A comparison between available XPS data on the Ga2O3/HZSM-5 catalytic system and the gallium binding energies measured in this work is proposed.
XPS analysis of gallium oxides / R. Carli, C.L. Bianchi. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 74:1(1994), pp. 99-102. [10.1016/0169-4332(94)90104-X]
XPS analysis of gallium oxides
C.L. BianchiUltimo
1994
Abstract
Samples of Ga2O, synthesized by reacting Ga2O3 and metallic gallium, are analyzed by XPS measurements. These samples reveal the presence of a new photoelectron signal, assigned to Ga(I), with 3d binding energy of 19.0 eV, which is lower than the measured GaIII(3d) binding energy (20.6 eV) and higher than the measured Ga0(3d) binding energy (18.5 eV). A comparison between available XPS data on the Ga2O3/HZSM-5 catalytic system and the gallium binding energies measured in this work is proposed.
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