Upon adsorption of Cs, the As-rich c(2×8)/(2×4) reconstruction of GaAs(001) is found to exhibit an intense negative signal between 3 eV and 5 eV in the reflectance anisotropy spectrum. This signal has a universal character in that similar features also appear on the Ga-rich surface. The mechanism of this signal is interpreted using ab initio calculations of Cs adsorption at As and Ga sites of the As-rich surface. The calculations succeed in explaining the universality of the signal. In the vicinity of the E′0 bulk critical point at 4.5 eV, the signal arises from perturbation of bulk states terminating at the surface. At lower energies, the signal arises from the creation of new surface resonances induced by the Cs adatom.
|Titolo:||Optical anisotropy induced by cesium adsorption on the As-rich c(2x8) reconstruction of GaAs(001)|
ONIDA, GIOVANNI (Ultimo)
|Settore Scientifico Disciplinare:||Settore FIS/03 - Fisica della Materia|
|Data di pubblicazione:||2004|
|Digital Object Identifier (DOI):||10.1103/PhysRevB.69.125332|
|Appare nelle tipologie:||01 - Articolo su periodico|