This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.

A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology / C. Calligaro, V. Liberali, A. Stabile, M. Bagatin, S. Gerardin, A. Paccagnella - In: 2010 International Conference on Microelectronics[s.l] : IEEE, 2010 Dec. - ISBN 9781612841496. - pp. 375-378 (( Intervento presentato al 22. convegno ICM : International conference on microelectronics tenutosi a Cairo nel 2010.

A multi-megarad, radiation hardened by design 512 kbit SRAM in CMOS technology

V. Liberali
Secondo
;
A. Stabile;
2010

Abstract

This paper describes a SRAM designed for space and nuclear physics applications. The device has been designed in a commercial 180 nm CMOS technology using RHBD techniques. Measurement on prototype samples under radiation demonstrate immunity to total dose and latch-up, and an adequate level of hardness with respect to single event effects.
static RAM; radiation hardening by design
Settore ING-INF/01 - Elettronica
dic-2010
IEEE
Book Part (author)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/150981
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