The observed data of transient electromagnetic (TEM) systems is often contaminated by various noises. Even after stacking averages or applying various denoising algorithms, the interference of the system noise floor cannot be eliminated fundamentally, which limits the survey capability and detection efficiency of TEM. To improve the noise performance of the TEM receiver, we have designed a low-noise amplifier using the current source long-tail differential structure and JFET IF3602 through analyzing the power spectrum characteristics of the TEM forward response. By the designed circuit structure, the JFET operating point is easy to set up. The adverse effect on the JFET differential structure by JFET performance differences is also weakened. After establishing the noise model and optimizing the parameters, the designed low-noise differential amplifier has a noise level of (Formula presented.), which increases the number of effective data 2.6 times compared with the LT1028 amplifier.

Design of a Differential Low-Noise Amplifier Using the JFET IF3602 to Improve TEM Receiver / S. Wang, Y. Zhao, Y. Sun, W. Wang, J. Chen, Y. Zhang. - In: MICROMACHINES. - ISSN 2072-666X. - 13:12(2022 Dec 13), pp. 2211.1-2211.15. [10.3390/mi13122211]

Design of a Differential Low-Noise Amplifier Using the JFET IF3602 to Improve TEM Receiver

J. Chen;
2022

Abstract

The observed data of transient electromagnetic (TEM) systems is often contaminated by various noises. Even after stacking averages or applying various denoising algorithms, the interference of the system noise floor cannot be eliminated fundamentally, which limits the survey capability and detection efficiency of TEM. To improve the noise performance of the TEM receiver, we have designed a low-noise amplifier using the current source long-tail differential structure and JFET IF3602 through analyzing the power spectrum characteristics of the TEM forward response. By the designed circuit structure, the JFET operating point is easy to set up. The adverse effect on the JFET differential structure by JFET performance differences is also weakened. After establishing the noise model and optimizing the parameters, the designed low-noise differential amplifier has a noise level of (Formula presented.), which increases the number of effective data 2.6 times compared with the LT1028 amplifier.
junction field-effect transistor; low noise; transient electromagnetic method
Settore GEOS-04/B - Geofisica applicata
13-dic-2022
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/1115109
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