Rare earth vanadate, LaVO3 (LVO) is a Mott-Hubbard insulator in which the spin, charge, and lattice degrees of freedom are intimately coupled, making them exhibit several interesting phenomena such as metal-insulator transition, ferroelectricity, 2D superconductivity etc. Epitaxial strain in LVO has a direct influence on their physical properties. This scenario provides an excellent playground to fine-tune the functionalities of LVO in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in LVO thin films has remained elusive due to the lack of systematic studies. This work demonstrates a wide-range epitaxial strain control of structural and electrical properties in high-quality LVO thin films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates with a lattice mismatch ranging from -3.7 to +1.5% with respect to bulk LVO. Our results provide relevant guidelines to design LVO-based heterostructures for device applications.
Substrate driven strain effects in LaVO3 thin films grown by Pulsed Laser Deposition / S. Punathum Chalil, S. Kumar Chaluvadi, A. Jana, J. Fujii, I. Vobornik, G. Rossi, F. Mazzola, P. Orgiani1 (IEEE NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE). - In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)[s.l] : IEEE, 2023. - ISBN 979-8-3503-3546-0. - pp. 510-511 (( Intervento presentato al 18. convegno IEEE Nanotechnology Materials and Devices Conference (NMDC) tenutosi a Paestum nel 2023 [10.1109/NMDC57951.2023.10344306].
Substrate driven strain effects in LaVO3 thin films grown by Pulsed Laser Deposition
G. Rossi;
2023
Abstract
Rare earth vanadate, LaVO3 (LVO) is a Mott-Hubbard insulator in which the spin, charge, and lattice degrees of freedom are intimately coupled, making them exhibit several interesting phenomena such as metal-insulator transition, ferroelectricity, 2D superconductivity etc. Epitaxial strain in LVO has a direct influence on their physical properties. This scenario provides an excellent playground to fine-tune the functionalities of LVO in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in LVO thin films has remained elusive due to the lack of systematic studies. This work demonstrates a wide-range epitaxial strain control of structural and electrical properties in high-quality LVO thin films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates with a lattice mismatch ranging from -3.7 to +1.5% with respect to bulk LVO. Our results provide relevant guidelines to design LVO-based heterostructures for device applications.File | Dimensione | Formato | |
---|---|---|---|
Substrate_driven_strain_effects_in_LaVO3_thin_films_grown_by_Pulsed_Laser_Deposition.pdf
accesso riservato
Tipologia:
Publisher's version/PDF
Dimensione
1.96 MB
Formato
Adobe PDF
|
1.96 MB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.