This paper presents a simple model to simulate MOS transistors at liquid nitrogen temperature (77 K). The proposed model accounts for the variations of the threshold voltage and of the carrier mobility. Transistor characteristics obtained from a test chip fabricated in 110 nm CMOS and submerged in liquid nitrogen confirm the validity of the model and provide information for parameter tuning.
Modelling and Verification of MOS Transistors at Cryogenic Temperature / A. Andreani, L. Frontini, V. Liberali, A. Stabile, V. Trabattoni - In: 2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST)[s.l] : IEEE, 2023. - ISBN 979-8-3503-2107-4. - pp. 1-4 (( Intervento presentato al 12. convegno MOCAST tenutosi a Athens nel 2023 [10.1109/MOCAST57943.2023.10176854].
Modelling and Verification of MOS Transistors at Cryogenic Temperature
A. AndreaniPrimo
;L. FrontiniSecondo
;V. Liberali;A. StabilePenultimo
;V. TrabattoniUltimo
2023
Abstract
This paper presents a simple model to simulate MOS transistors at liquid nitrogen temperature (77 K). The proposed model accounts for the variations of the threshold voltage and of the carrier mobility. Transistor characteristics obtained from a test chip fabricated in 110 nm CMOS and submerged in liquid nitrogen confirm the validity of the model and provide information for parameter tuning.
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