High-resolution electron energy-loss measurements performed in situ on GaAs(0 0 1)-c(4 × 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies.
The GaAs(001)c(4x4) surface: a new perspective from Energy Loss Spectra / A. Balzarotti, M. Fanfoni, F. Patella, F. Arciprete, E. Placidi, G. Onida, and R. Del Sole. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 524 (2003):1-3(2003), pp. L71-L76.
The GaAs(001)c(4x4) surface: a new perspective from Energy Loss Spectra
G. OnidaPenultimo
;
2003
Abstract
High-resolution electron energy-loss measurements performed in situ on GaAs(0 0 1)-c(4 × 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies.Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.