We present a detailed synchrotron radiation photoemission study of the elemental semiconductor-Ag interfaces for very small coverages (up to 2.5 monolayers). Our results provide the first evidence of a chemical reaction and intermixing between Ag and the (IV) semiconductors at room temperature.
Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages / G. Rossi, I. Abbati, L. Braicovich, I. Lindau, W.E. Spicer. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 112:1-2(1981), pp. L765-L769.
Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages
G. RossiPrimo
;
1981
Abstract
We present a detailed synchrotron radiation photoemission study of the elemental semiconductor-Ag interfaces for very small coverages (up to 2.5 monolayers). Our results provide the first evidence of a chemical reaction and intermixing between Ag and the (IV) semiconductors at room temperature.
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