The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.
Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7 / F. Sirotti, M. Desantis, X. Jin, G. Rossi. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - 65-66:C(1993), pp. 800-805. (Intervento presentato al 6. convegno International Conf on solid films and surfaces tenutosi a Paris nel 1992) [10.1016/0169-4332(93)90759-5].
Electronic states at the first stages of epitaxial growth of Fe silicides on Si(111)7 x 7
G. RossiUltimo
1993
Abstract
The electronic structure of the first stage of epitaxial growth of iron on Si(111)7 x 7 is investigated by photoelectron and soft X-ray absorption spectroscopy. The Fe/Si interfaces, obtained by means of solid-phase epitaxy, are studied for various coverages and as a function of the annealing temperature. These studies give some insight into the properties of the interface formation of FeSi2.
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