We present here the first results obtained by surface EXAFS on the Si/AsGa(l 10) interface. Three coverages of 3, 8 and 14 A of silicon have been deposited on a cleaved surface under ultra-high-vacuum and the spectra for the s and p polarizations have been obtained.
Surface exafs study of the si/asga(110) interface: First results / M.L. Hasnoui, P. Lagarde, R. Delaunay, G. Rossi, A.M. Flank. - In: JAPANESE JOURNAL OF APPLIED PHYSICS. PART 1, REGULAR PAPERS & SHORT NOTES. - ISSN 0021-4922. - 32:suppl. 2(1993), pp. 391-392. ((Intervento presentato al 7. convegno International Conf on x-ray absorption fine structure ( XAFS 7 ) tenutosi a Kobe nel 1992.
Surface exafs study of the si/asga(110) interface: First results
G. RossiPenultimo
;
1993
Abstract
We present here the first results obtained by surface EXAFS on the Si/AsGa(l 10) interface. Three coverages of 3, 8 and 14 A of silicon have been deposited on a cleaved surface under ultra-high-vacuum and the spectra for the s and p polarizations have been obtained.
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