The application of near-edge, surface, extended x-ray absorption fine structure to the study of a clean surface is reported. Direct evidence is found for surface recrystallization of ion-damaged (amorphized) Si, whereas no such evidence is seen for evaporated (amorphous) Si. The procedures described here are applicable to almost all clean or adsorbate-covered surfaces.
Local atomic structure of a clean surface by surface extended x-ray absorption fine structure: Amorphized Si / F. Comin, L. Incoccia, P. Lagarde, G. Rossi, P.H. Citrin. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 54:2(1985), pp. 122-125. [10.1103/PhysRevLett.54.122]
Local atomic structure of a clean surface by surface extended x-ray absorption fine structure: Amorphized Si
G. RossiPenultimo
;
1985
Abstract
The application of near-edge, surface, extended x-ray absorption fine structure to the study of a clean surface is reported. Direct evidence is found for surface recrystallization of ion-damaged (amorphized) Si, whereas no such evidence is seen for evaporated (amorphous) Si. The procedures described here are applicable to almost all clean or adsorbate-covered surfaces.
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