This paper presents a charge pump voltage doubler for programming flash memories to be employed in space applications. The device has been designed in a commercial 180 nm CMOS technology using radiation hardening by design techniques. Radiation tests carried out on prototype samples demonstrate immunity to latch-up, and an adequate level of hardness with respect to total dose.
A radiation hardened by design charge pump for flash memories / G. Bellotti, V. Liberali, A. Stabile, S. Gregori - In: 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS)Piscataway : IEEE, 2013 Sep. - ISBN 9781467350570. - pp. 1-4 (( Intervento presentato al 14. convegno European Conference on Radiation and Its Effects on Components and Systems (RADECS) tenutosi a Oxford nel 2013.
A radiation hardened by design charge pump for flash memories
V. LiberaliSecondo
;A. StabilePenultimo
;
2013
Abstract
This paper presents a charge pump voltage doubler for programming flash memories to be employed in space applications. The device has been designed in a commercial 180 nm CMOS technology using radiation hardening by design techniques. Radiation tests carried out on prototype samples demonstrate immunity to latch-up, and an adequate level of hardness with respect to total dose.
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