The BaBar Silicon Vertex Tracker (SVT) has been efficiently operated for six years since the start of data taking in 1999. Due to higher than expected background levels some unforeseen effects have appeared. We discuss: a shift in the pedestal for the channels of the AToM readout chips that are most exposed to radiation; an anomalous increase in the bias leakage current for the modules in the outer layers. Estimates of future radiation doses and occupancies are shown together with the extrapolated detector performance and lifetime, in light of the new observations.
BABAR silicon vertex tracker: Status and prospects / V. RE, M. BONDIOLI, M. BRUINSMA, S. CURRY, D. KIRKBY, J. BERRYHILL, S. BURKE, D. CALLAHAN, C. CAMPAGNARI, A. CUNHA, B. DAHMES, D. HALE, S. KYRE, J. RICHMAN, J. STONER, W. VERKERKE, T. BECK, A.M. EISNER, J. KROSEBERG, W.S. LOCKMAN, G. NESOM, A. SEIDEN, P. SPRADLIN, M. WILSON, L. WINSTROM, C. BOZZI, G. CIBINETTO, L. PIEMONTESE, D. BROWN, E. CHARLES, S. DARDIN, F. GOOZEN, A. GRITSAN, L.T. KERTH, G. LYNCH, N.A. ROE, C. CHEN, C.K. LAE, D. ROBERTS, G. SIMI, A. LAZZARO, F. PALOMBO, H.L. SNOEK, L. RATTI, C. ANGELINI, G. BATIGNANI, S. BETTARINI, F. BOSI, F. BUCCI, G. CALDERINI, M. CARPINELLI, M. CECCANTI, F. FORTI, R. CENCI, M.A. GIORGI, A. LUSIANI, P. MAMMINI, P.F. MANFREDI, G. MARCHIORI, M. MAZUR, M. MORGANTI, F. MORSANI, N. NERI, E. PAOLONI, A. PROFETI, M. RAMA, G. RIZZO, J. WALSH, P. ELMER, O. LONG, A. PERAZZO, P. BURCHAT, A.J. EDWARDS, S. MAJEWSKI, B.A. PETERSEN, M. BONA, F. BIANCHI, D. GAMBA, P. TRAPANI, M. BOMBEN, L. BOSISIO, C. CARTARO, F. COSSUTTI, G. DELLA RICCA, S. DITTONGO, L. LANCERI, L. VITALE, M. DATTA, A. MIHALYI. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 569:1(2006), pp. 1-4.
BABAR silicon vertex tracker: Status and prospects
A. LAZZARO;F. PALOMBO;N. NERI;
2006
Abstract
The BaBar Silicon Vertex Tracker (SVT) has been efficiently operated for six years since the start of data taking in 1999. Due to higher than expected background levels some unforeseen effects have appeared. We discuss: a shift in the pedestal for the channels of the AToM readout chips that are most exposed to radiation; an anomalous increase in the bias leakage current for the modules in the outer layers. Estimates of future radiation doses and occupancies are shown together with the extrapolated detector performance and lifetime, in light of the new observations.
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