In this paper we present a new VLSI shaper amplifier suitable for multi-anode silicon drift detectors, or other multi-element solid-state X-ray detection systems. The readout scheme has been conceived and developed for demanding applications with synchrotron light sources, such as X-ray holography or EXAFS experiments, where both high count-rates and high energy resolutions are required. The circuit is of time-variant nature, accepts randomly distributed events and features: a finite-width (1.1 μs) weight function, a low-level energy discrimination, a low power consumption (a few mW per channel) and a full compatibility for monolithic integration in CMOS technology.
A monolithic implementation of a switched-current "wheel" amplifier for multichannel silicon drift detectors / C. Fiorini, A. Pullia, P. Novellini, E. Gatti, A. Longoni, W. Buttler (IEEE CONFERENCE RECORD - NUCLEAR SCIENCE SYMPOSIUM & MEDICAL IMAGING CONFERENCE). - In: 1998 IEEE Nuclear Science Symposium Conference Record. 1998 IEEE Nuclear Science Symposium and Medical Imaging Conference (Cat. No.98CH36255)[s.l] : IEEE, 1999. - ISBN 0780350219. - pp. 64-68 (( convegno IEEE Nuclear Science Symposium Conference Record tenutosi a Toronto nel 1998 [10.1109/NSSMIC.1998.774810].
A monolithic implementation of a switched-current "wheel" amplifier for multichannel silicon drift detectors
A. PulliaSecondo
;
1999
Abstract
In this paper we present a new VLSI shaper amplifier suitable for multi-anode silicon drift detectors, or other multi-element solid-state X-ray detection systems. The readout scheme has been conceived and developed for demanding applications with synchrotron light sources, such as X-ray holography or EXAFS experiments, where both high count-rates and high energy resolutions are required. The circuit is of time-variant nature, accepts randomly distributed events and features: a finite-width (1.1 μs) weight function, a low-level energy discrimination, a low power consumption (a few mW per channel) and a full compatibility for monolithic integration in CMOS technology.File | Dimensione | Formato | |
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