Investigations on changes of characteristics of ion-implanted Si-junction detectors when exposed to various does of radiation (<105 and >106 rad) were performed. The increase of leakage current depends not only on the dose but also on the gradient of irradn. For doses >106 rad, the fully depleted layer thickness of the detector before irradn. decreases and becomes dependent on temp. Also the most probable energy loss decreases and the width of the noise distribution broadens.
The effect of radiation on ion-implanted silicon detectors / M. Campanella, N. Croitoru, F. Groppi, F. Lemeilleur, S. Pensotti, P.G. Rancoita, A. Seidman. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - A243:1(1986), pp. 93-97.
The effect of radiation on ion-implanted silicon detectors
F. Groppi;
1986
Abstract
Investigations on changes of characteristics of ion-implanted Si-junction detectors when exposed to various does of radiation (<105 and >106 rad) were performed. The increase of leakage current depends not only on the dose but also on the gradient of irradn. For doses >106 rad, the fully depleted layer thickness of the detector before irradn. decreases and becomes dependent on temp. Also the most probable energy loss decreases and the width of the noise distribution broadens.
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