Cryogenic low-noise charge sensitive preamplifiers have been developed and realized for the GERmanium Detector Array (GERDA). An integrated JFET-CMOS preamplifier, which is fully functional at cryogenic temperatures, has been tested in conjunction with an unsegmented p-type HPGe detector. Both the crystal and the preamplifier were operated inside a liquid nitrogen dewar at 77 K. The detector capacitance was similar to 60 pF. An optimum resolution of 1.6 keV FWHM has been obtained for the pulser line at 6 mu s shaping time. A resolution of 2.1 keV FWHM has been achieved for the 1.332 MeV line from a Co-60 source. A wide bandwidth (rise time of similar to 16 ns) permits use of pulse-shape analysis techniques to localize the position of the photon interactions inside the crystal. A low power consumption (23 mW) makes the preamplifier suitable for a multi-channel array of germanium detectors.
Cryogenic performance of a low-noise JFET-CMOS preamplifier for HPGe detectors / A. Pullia, F. Zocca, S. Riboldi, D. Budjas, A. D'Andragora, C. Cattadori. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 57:2(2010 Apr), pp. 5446495.737-5446495.742. [10.1109/TNS.2009.2038697]
Cryogenic performance of a low-noise JFET-CMOS preamplifier for HPGe detectors
A. PulliaPrimo
;S. Riboldi;
2010
Abstract
Cryogenic low-noise charge sensitive preamplifiers have been developed and realized for the GERmanium Detector Array (GERDA). An integrated JFET-CMOS preamplifier, which is fully functional at cryogenic temperatures, has been tested in conjunction with an unsegmented p-type HPGe detector. Both the crystal and the preamplifier were operated inside a liquid nitrogen dewar at 77 K. The detector capacitance was similar to 60 pF. An optimum resolution of 1.6 keV FWHM has been obtained for the pulser line at 6 mu s shaping time. A resolution of 2.1 keV FWHM has been achieved for the 1.332 MeV line from a Co-60 source. A wide bandwidth (rise time of similar to 16 ns) permits use of pulse-shape analysis techniques to localize the position of the photon interactions inside the crystal. A low power consumption (23 mW) makes the preamplifier suitable for a multi-channel array of germanium detectors.File | Dimensione | Formato | |
---|---|---|---|
Cryogenic performance of a low-noise JFET-CMOS preamplifier for HPGe detectors.pdf
accesso aperto
Tipologia:
Pre-print (manoscritto inviato all'editore)
Dimensione
1.34 MB
Formato
Adobe PDF
|
1.34 MB | Adobe PDF | Visualizza/Apri |
Cryogenic performance of a low-noise JFET-CMOS preamplifier for HPGe detectors.pdf
accesso aperto
Tipologia:
Publisher's version/PDF
Dimensione
1.34 MB
Formato
Adobe PDF
|
1.34 MB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.