The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 µm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.

Low-power, subthreshold reference circuits for the space environment: Evaluated with γ-rays, X-rays, protons and heavy ions / C.M. Andreou, D.M. Gonzalez-Castano, S. Gerardin, M. Bagatin, F.G. Rodriguez, A. Paccagnella, A.V. Prokofiev, A. Javanainen, A. Virtanen, V. Liberali, C. Calligaro, D. Nahmad, J. Georgiou. - In: ELECTRONICS. - ISSN 2079-9292. - 8:5(2019 May), pp. 562.1-562.24. [10.3390/electronics8050562]

Low-power, subthreshold reference circuits for the space environment: Evaluated with γ-rays, X-rays, protons and heavy ions

V. Liberali;
2019

Abstract

The radiation tolerance of subthreshold reference circuits for space microelectronics is presented. The assessment is supported by measured results of total ionization dose and single event transient radiation-induced effects under γ-rays, X-rays, protons and heavy ions (silicon, krypton and xenon). A high total irradiation dose with different radiation sources was used to evaluate the proposed topologies for a wide range of applications operating in harsh environments similar to the space environment. The proposed custom designed integrated circuits (IC) circuits utilize only CMOS transistors, operating in the subthreshold regime, and poly-silicon resistors without using any external components such as compensation capacitors. The circuits are radiation hardened by design (RHBD) and they were fabricated using TowerJazz Semiconductor’s 0.18 µm standard CMOS technology. The proposed voltage references are shown to be suitable for high-precision and low-power space applications. It is demonstrated that radiation hardened microelectronics operating in subthreshold regime are promising candidates for significantly reducing the size and cost of space missions due to reduced energy requirements.
Analog single-event transient (ASET); Bandgap voltage reference (BGR); CMOS analog integrated circuits; Gamma-rays; Heavy-ions; Ionization; Protons; Radiation hardening by design (RHBD); Reference circuits; Single-event effects (SEE); Space electronics; Total ionization dose (TID); Voltage reference; X-rays
Settore ING-INF/01 - Elettronica
mag-2019
Article (author)
File in questo prodotto:
File Dimensione Formato  
electronics-08-00562.pdf

accesso aperto

Tipologia: Publisher's version/PDF
Dimensione 7.16 MB
Formato Adobe PDF
7.16 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/673332
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 7
  • ???jsp.display-item.citation.isi??? 7
social impact