The paper describes a high-speed high efficiency H-Bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.
A high-speed H-bridge circuit based on GaN HFETs and custom resonant gate drivers / B. Wang, A. Monti, M. Riva - In: Energy conversion congress and exposition : ECCE 2009 : San Jose, California, September 20-24, 2009[Piscataway, NJ] : IEEE, 2009 Sep. - ISBN 978-1-4244-2892-2. - pp. 973-978 (( convegno Energy conversion congress and exposition : ECCE tenutosi a San Jose, CA nel 2009 [10.1109/ECCE.2009.5316361].
A high-speed H-bridge circuit based on GaN HFETs and custom resonant gate drivers
M. RivaUltimo
2009
Abstract
The paper describes a high-speed high efficiency H-Bridge circuit based upon Gallium nitride (GaN) Heterostructure Field-effect Transistor (HFET) devices as power switches. The use of a new designed driver integrated circuit (IC) makes it possible to exploit the capabilities and advantages of GaN technology in power electronic applications by means of a smart and convenient implementation. Low power losses small size and high reliability are the main advantages of which the design of power systems can benefit. A full discussion of the design and of the experimental results of a DC to AC H-bridge inverter concludes the paper.
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