The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments / S. Fiore, C. Abbate, S. Baccaro, G. Busatto, M. Citterio, F. Iannuzzo, A. Lanza, S. Latorre, M. Lazzaroni, A. Sanseverino, F. Velardi (ASTROPARTICLE, PARTICLE, SPACE PHYSICS, RADIATION INTERACTION, DETECTORS AND MEDICAL PHYSICS APPLICATIONS). - In: Astroparticle, Particle, Space Physics and Detectors for Physisc Applications / [a cura di] S. Giani, C. Leroy, L. Proce, P.G Rancoita, L. Ruchti. - [s.l] : World Scientific Publisher, 2013 Sep. - ISBN 9789814603157. - pp. 664-668 (( Intervento presentato al 14. convegno ICATPP tenutosi a Como nel 2013 [10.1142/9789814603164_0106].
Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments
M. Lazzaroni;
2013
Abstract
The radiation hardness of commercial Silicon Carbide and Gallium Nitride power MOSFETs is presented in this paper, for Total Ionizing Dose effects and Single Event Effects, under γ, neutrons, protons and heavy ions. Similar tests are discussed for commercial DC-DC converters, also tested in operation under magnetic field.
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