We present the design and performance of a wide-band amplifier for radiation detectors employing an High Electron Mobility Transistor at its input. An Equivalent Noise Charge of less than 150 rms electrons has been measured at room temperature with RC-CR shaping ranging from 100 ns down to 10 ns. The particular requirements and advantages for using HEMTs as front-end device in charge amplifier are analysed.
A wide-band low-noise charge amplifier with High Electron Mobility Transistor input stage / G. Bertuccio, A. Pullia - In: 1994 IEEE Nuclear science symposium conference record. Volume 2Piscataway, USA : IEEE, 1995. - ISBN 0-7803-2544-3. - pp. 740-744 (( convegno Nuclear science symposium and medical imaging conference tenutosi a Norfolk, VA, USA nel 1994 [10.1109/NSSMIC.1994.474504].
A wide-band low-noise charge amplifier with High Electron Mobility Transistor input stage
A. PulliaUltimo
1995
Abstract
We present the design and performance of a wide-band amplifier for radiation detectors employing an High Electron Mobility Transistor at its input. An Equivalent Noise Charge of less than 150 rms electrons has been measured at room temperature with RC-CR shaping ranging from 100 ns down to 10 ns. The particular requirements and advantages for using HEMTs as front-end device in charge amplifier are analysed.
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