An experimental investigation on the gate current noise in a pseudomorphic HEMT has been carried out. The measurements have been performed from 10 Hz to 100 kHz, at different bias conditions. It is shown that the noise spectral power density strongly depends on the biasing point and can be explained in terms of carrier trapping phenomena by means of packets of Lorentzian components.
Low frequency gate current noise in high electron mobility transistors : experimental analysis / G. Bertuccio, G. De Geronimo, A. Longoni, A. Pullia. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 16:3(1995), pp. 103-105.
Low frequency gate current noise in high electron mobility transistors : experimental analysis
A. PulliaUltimo
1995
Abstract
An experimental investigation on the gate current noise in a pseudomorphic HEMT has been carried out. The measurements have been performed from 10 Hz to 100 kHz, at different bias conditions. It is shown that the noise spectral power density strongly depends on the biasing point and can be explained in terms of carrier trapping phenomena by means of packets of Lorentzian components.
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