We discuss the effects of a static long-range contribution - alpha /q2 to the exchange-correlation kernel fxc(q) of time-dependent density functional theory. We show that the optical absorption spectrum of solids exhibiting a strong continuum excitonic effect is considerably improved with respect to calculations where the adiabatic local-density approximation is used. We discuss the limitations of this simple approach, and in particular that the same improvement cannot be found for the whole spectral range including the valence plasmons and bound excitons. On the other hand, we also show that within the range of validity of the method, the parameter alpha depends linearly on the inverse of the dielectric constant, and we demonstrate that this fact can be used to predict continuum excitonic effects in semiconductors. Results are shown for the real and imaginary part of the dielectric function of Si, GaAs, AlAs, diamond, MgO, SiC and Ge, and for the loss function of Si.

Long-range contribution to the exchange-correlation kernel of time-dependent density-functional theory / S. Botti, F. Sottile, N. Vast, V. Olevano, L. Reining, HC. Weissker, A. Rubio, G. Onida, R. Del Sole, R.W. Godby. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 69:15(2004), pp. 155112.155112-1-155112.155112-14.

Long-range contribution to the exchange-correlation kernel of time-dependent density-functional theory

G. Onida;
2004

Abstract

We discuss the effects of a static long-range contribution - alpha /q2 to the exchange-correlation kernel fxc(q) of time-dependent density functional theory. We show that the optical absorption spectrum of solids exhibiting a strong continuum excitonic effect is considerably improved with respect to calculations where the adiabatic local-density approximation is used. We discuss the limitations of this simple approach, and in particular that the same improvement cannot be found for the whole spectral range including the valence plasmons and bound excitons. On the other hand, we also show that within the range of validity of the method, the parameter alpha depends linearly on the inverse of the dielectric constant, and we demonstrate that this fact can be used to predict continuum excitonic effects in semiconductors. Results are shown for the real and imaginary part of the dielectric function of Si, GaAs, AlAs, diamond, MgO, SiC and Ge, and for the loss function of Si.
aluminium compounds; density functional theory; diamond; dielectric function; electron correlations; elemental semiconductors; exchange interactions (electron); excitons; gallium arsenide; germanium; III-V semiconductors; magnesium compounds; permittivity; plasmons; silicon; silicon compounds; wide band gap semiconductors
Settore FIS/03 - Fisica della Materia
2004
Article (author)
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/16795
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 184
  • ???jsp.display-item.citation.isi??? 178
social impact