Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.

The ATLAS silicon pixel sensors / M. S. Alam, A. Ciocio, K. Einsweiler, J. Emes, M. Gilchriese, A. Joshi, S. Kleinfelder, R. Marchesini, F. McCormack, O. Milgrome, N. Palaio, F. Pengg, J. Richardson, G. Zizka, M. Ackers, A. Andreazza, G. Comes, P. Fischer, M. Keil, V. Klasen, T. Kuhl, S. Meuser, W. Ockenfels, B. Raith, J. Treis, N. Wermes, C. Gößling, F. Hügging, J. Wüstenfeld, R. Wunstorf, D. Barberis, R. Beccherle, G. Darbo, G. Gagliardi, C. Gemme, P. Morettini, P. Musico, B. Osculati, F. Parodi, L. Rossi, L. Blanquart, P. Breugnon, D. Calvet, J. C. Clemens, P. Delpierre, G. Hallewell, D. Laugier, T. Mouthuy, A. Rozanov, I. Valin, M. Aleppo, M. Caccia, F. Ragusa, C. Troncon, G. Lutz, R. H. Richter, T. Rohe, A. Brandl, G. Gorfine, M. Hoeferkamp, S. C. Seidel, G. R. Boyd, P. L. Skubic, P. Sícho, L. Tomasek, V. Vrba, M. Holder, M. Ziolkowski, S. D’Auria, C. del Papa, E. Charles, D. Fasching, K. H. Becks, G. Lenzen, C. Linder. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 456:3(2001), pp. 217-232. [10.1016/S0168-9002(00)00574-X]

The ATLAS silicon pixel sensors

A. Andreazza;M. Aleppo;F. Ragusa;S. D’Auria;
2001

Abstract

Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to attachment of the readout integrated circuit electronics is also desired.
Physics ; sensors ; detectors ; pixel ; radiation hardness
Settore FIS/01 - Fisica Sperimentale
2001
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/2434/139480
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